Datasheet Details
| Part number | 2SD613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SD613-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD613.
| Part number | 2SD613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SD613-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency 25~35 watts output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 85 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD613 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD613 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SD613 | SILICON POWER TRANSISTOR | SavantIC |
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2SD613P | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD612 | NPN Transistor |
| 2SD617 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD627 | NPN Transistor |
| 2SD628 | Silicon NPN Darlington Power Transistor |
| 2SD632 | NPN Transistor |