Datasheet Details
| Part number | 2SD617 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SD617-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD617 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SD617-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 UNIT V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6 V 8 A 12 A 100 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD617 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB=0 MIN TYP.
MAX UNIT 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-2 DC Current Gain IC= 4A;
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