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2SD627 - NPN Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD627 isc website：www.iscsemi.