2SD635 Datasheet (PDF) Download
Inchange Semiconductor
2SD635

Description

High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A Complement to Type 2SB675 Minimum Lot-to-Lot variations for robust device performance and reliable operation.