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2SD635 - NPN Transistor

General Description

High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A Complement to Type 2SB675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power switching applications.

Hammer

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB675 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.