| Part number | 2SD641 |
|---|---|
| Datasheet | 2SD641-INCHANGE.pdf |
| File Size | 201.29 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD641 | Silicon NPN Transistor | Toshiba |
 |
2SD641 | SILICON POWER TRANSISTOR | SavantIC |
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