• Part: 2SD641
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 117.23 KB
Download 2SD641 Datasheet PDF
2SD641 page 2
Page 2
2SD641 page 3
Page 3

Datasheet Summary

SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH POWER AMPLIFIER APPLICATIONS. Features - High Voltage : VCEO=400V - Low Saturation Voltage : VcE(sat) = l»5V (Max.) (I C =10A, I B =2A) INDUSTRIAL APPLICATIONS Unit in mm ^25.0MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 'ollector Power Dissipation Junction Temperature Storage Temperature Range VCBO v CEO VEBO ic IB [stg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current...