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2SD641 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching applications.

High p

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications. ·High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD641 isc website：www.iscsemi.