Inchange Semiconductor 2SD641
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD641 |
|---|---|
| Datasheet | 2SD641 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min)●Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage switching applications.●High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD641 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat) Base-Emitter Saturatio...