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2SD641 - NPN Transistor

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Part number 2SD641
Manufacturer INCHANGE
File Size 201.29 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications. High power amplifier applications.

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