NPN Transistor
| Part number | 2SD640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.37 KB |
| Description | NPN Transistor |
| Datasheet | 2SD640-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD640 | Silicon NPN Transistor | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD641 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
| 2SD613 | NPN Transistor |
| 2SD617 | NPN Transistor |
| 2SD627 | NPN Transistor |
