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2SD640 - Silicon NPN Transistor

Datasheet Summary

Features

  • High Voltage : VCEO=400V.
  • Low Saturation Voltage : VCE(sat )=1.5V (Max. ) (I C =5A, I B =1A).

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Datasheet preview – 2SD640

Datasheet Details

Part number 2SD640
Manufacturer Toshiba
File Size 120.59 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD640 Datasheet
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Full PDF Text Transcription

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: 2SD640 I SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS. 025.OMAX. FEATURES • High Voltage : VCEO=400V • Low Saturation Voltage : VCE(sat )=1.5V (Max.) (I C =5A, I B =1A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power DissipFation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO v EBO !C IB ?C T i T stg RATING 600 400 5 7 2 100 150 -65M.50 ELECTRICAL CHARACTERISTICS (Ta=25°C) UNIT V V V A A W °C °C ,021-OMAX., % "1 : ei CO f- li ! . 1 +ao9 1 i . 51.0-0.0 4 1 lr±n: ' t 30.2 ±0.2 , 1&9±0.24 X XS" 04.0—0.
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