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2SD648A - Silicon NPN Transistor

Key Features

  • . High Voltage : VCEO ( SUS )=300V . Triple Diffused Design. . Darlington Design.

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Datasheet Details

Part number 2SD648A
Manufacturer Toshiba
File Size 116.99 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD648A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. DC MOTOR CONTROL APPLICATIONS. ELECTRIC CAR APPLICATIONS. FEATURES . High Voltage : VCEO ( SUS )=300V . Triple Diffused Design. . Darlington Design . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 300 Collector-Emitter Voltage ^CEO(SUS) 300 Emitter-Base Voltage VEBO Collector Current ic 400 Emitter Current IE -400 Base Current Thermal Resistance (Double Side Cooling) IB Rth(j-c) 12 0.04 Junction Temperature 125 Storage Temperature Range Mounting Force Required L stg -40-150 1000±100 UNIT C/W kg INDUSTRIAL APPLICATIONS Unit in mm 2-05.2±O.2 04.3 ±0,1 1. BASE 2.