2SD648A
2SD648A is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Voltage : VCEO ( SUS )=300V . Triple Diffused Design. . Darlington Design .
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage ^CEO(SUS)
Emitter-Base Voltage
VEBO
Collector Current ic
Emitter Current
-400
Base Current
Thermal Resistance (Double Side Cooling)
IB Rth(j-c)
12 0.04
Junction Temperature
Storage Temperature Range Mounting Force Required
L stg
-40-150
1000±100
UNIT
C/W kg
INDUSTRIAL APPLICATIONS Unit in mm
2-05.2±O.2
04.3 ±0,1
1. BASE 2. EMITTER a COLLECTOR
TOSHIBA
2-6 7A1A
Weight : 250g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST...
