• Part: 2SD664
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 113.48 KB
Download 2SD664 Datasheet PDF
Toshiba
2SD664
2SD664 is NPN Transistor manufactured by Toshiba.
FEATURES - High DC Current Gain : h FE=2000(Min.)(VCE=3V, I C=3A) - Low Saturation Voltage - V C E( S at) =1 - 5v (Max.)(I c=3A) - Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo SYMBOL Vc BO VCEO VEBO ic T stg RATING 80 80 UNIT 0.2 40 150 -65M.50 OLLECTOR 1 BASE Z EMITTER COLLECTOR(CASE) - 66 TC - 16A, TB Mounting Kit No. AC74 Weight : 5.9g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage (Ta=25°c) SYMBOL ICBO I EB0 V...