2SD664 - NPN Transistor

Toshiba

Key Features

High DC Current Gain : hFE=2000(Min. )(VCE=3V, I C=3A).
Low Saturation Voltage.
V C E( S at) =1 - 5v (Max. )(I c=3A).
Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX.

2SD664 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD664
Manufacturer	Toshiba
File Size	113.48 KB
Description	NPN Transistor
Datasheet	2SD664 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A) • Low Saturation Voltage • V C E( S at) =1 - 5v (Max.)(I c=3A) • Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo SYMBOL VcBO VCEO VEBO ic PC T stg RATING 80 80 UNIT 0.2 40 150 -65M.50 OLLECTOR 1 BASE Z EMITTER COLLECTOR(CASE) TO — 66 TC — 16A, TB Mounting Kit No. AC74 Weight : 5.