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2SD651 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching a

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD651 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 4 ICM Collector Current-peak 6 IB Base Current 0.5 PC Collector Power Dissipation @TC=25℃ 30 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ isc website：www.iscsemi.