Datasheet Details
| Part number | 2SD652 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SD652-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD652 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SD652-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 500 VEBO Emitter-Base Voltage 7 IC Collector Current 6 ICM Collector Current-peak 8 IB Base Current 0.5 PC Collector Power Dissipation @TC=25℃ 80 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD652 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Part Number | Description |
|---|---|
| 2SD650 | NPN Transistor |
| 2SD651 | NPN Transistor |
| 2SD657 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
| 2SD613 | NPN Transistor |