Datasheet Details
| Part number | 2SD651 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD651-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD651 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD651-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 4 ICM Collector Current-peak 6 IB Base Current 0.5 PC Collector Power Dissipation @TC=25℃ 30 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD651 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Part Number | Description |
|---|---|
| 2SD650 | NPN Transistor |
| 2SD652 | NPN Transistor |
| 2SD657 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
| 2SD613 | NPN Transistor |