2SD652 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as:

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Datasheet Details

Part number	2SD652
Manufacturer	Inchange Semiconductor
File Size	193.84 KB
Description	NPN Transistor
Datasheet	2SD652 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD652 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 500 VEBO Emitter-Base Voltage 7 IC Collector Current 6 ICM Collector Current-peak 8 IB Base Current 0.