Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
High Power Dissipation-
: PC= 60W(Max)@TC=25℃
Complement to Type 2SB653
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier appli
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistors
2SD673
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High Power Dissipation-
: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB653 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
2
A
60
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.
2SD673 Datasheet
