Datasheet Details
| Part number | 2SD689 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.34 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD689 Datasheet
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| Part number | 2SD689 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.34 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD689 Datasheet
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·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD689 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD689 | NPN Transistor | Toshiba |
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|---|---|
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