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2SD689 - NPN Transistor

Key Features

  • . High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA) . Complementary to 2SB679. x. T 1.5MAX.

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Datasheet Details

Part number 2SD689
Manufacturer Toshiba
File Size 44.29 KB
Description NPN Transistor
Datasheet download datasheet 2SD689 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS. 10.3MAX, (2fe-6±0.2 >