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2SD685
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. FEATURES :
. High DC Current Gain : hFE =400 (Min.)(VCE =2V, I C=4A)
. High Reverse Energy : Es/g=245mJ (Min.) . Monolithic Construction With Built-in
Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
025.OMAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
—BASE o
SYMBOL VCBO vCEO vebo ic IB
PC
T.1
Tstg
RATING 600 400
i
10
2
100
150 -65vL50
UNIT V V V A A
W
*C °C
JEDEC EIAJ
L BASE Z.
2SD685 Datasheet
