• Part: 2SD685
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 124.00 KB
Download 2SD685 Datasheet PDF
Toshiba
2SD685
FEATURES : . High DC Current Gain : h FE =400 (Min.)(VCE =2V, I C=4A) . High Reverse Energy : Es/g=245m J (Min.) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT - BASE o SYMBOL VCBO v CEO vebo ic IB T.1 Tstg RATING 600 400 i 150 -65v L50 UNIT V V V A A - C °C JEDEC EIAJ L BASE Z. EMITTER COLLECTOR (CASE) - 3, TB - 21A 1 A ELECTRICAL CHARACTERISTICS (Ta=25°C) EMITTER Mounting kit No. AC73 Weight : 12. 9g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off...