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2SD684 - NPN Transistor

Key Features

  • High DC Current Gain : hFE=1500 (Min. ) (VCE=2V, I C=2A).

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Datasheet Details

Part number 2SD684
Manufacturer Toshiba
File Size 97.02 KB
Description NPN Transistor
Datasheet download datasheet 2SD684 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min.) (VCE=2V, I C=2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO v CEO Vebo XC IB PC T1 Tste RATING 600 300 5 6 1 UNIT V V V A A 30 150 -65VL50 W °C °C 'COLLECTOR 1. BASE 2. EMITTER COLLECTOR (CASE) TO 66 TC — 16A, TB 2 — 13 A 1 A I I ~2yk^Qif1 ELECTRICAL CHARACTERISTICS (Ta=25°C) EMITTER Mounting Kit No. AC74 Weight : 5.