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2SD684A
,
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
Unit in mm
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES
• High DC Current Gain : h FE=600 (Min.) (V CE=2V, Ic=2A)
• Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
SYMBOL v CBO VCEO
.
Vebo ic IB
PC
Ti
Tstg
RATING 600 400
5 6 1
30 150 -65vL50
UNIT V
V V A A
W
°C °c
1, BASE 2. EMITTER
COLLECTOR(CASE)
JEDEC EIAJ TOSHIBA
TO 66
TC — 16A, TB — 23
Mounting kit No.AC74 Weight : 5 .
2SD684A Datasheet
