2SD684A
FEATURES
- High DC Current Gain : h FE=600 (Min.) (V CE=2V, Ic=2A)
- Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
SYMBOL v CBO VCEO
.
Vebo ic IB
Ti
Tstg
RATING 600 400
5 6 1
30 150 -65v L50
UNIT V
°C °c
1, BASE 2. EMITTER
COLLECTOR(CASE)
JEDEC EIAJ TOSHIBA
TO 66
- 16A, TB
- 23
Mounting kit No.AC74 Weight : 5 . 9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current Collector-Emitter Breakdown Voltage l EBO V (BR) CEO
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter...
