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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.
PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS,
FEATURES
• High DC Current Gain : h FE=1000 (Min.)
(VCE=2V, I C=1A)
• Low Saturation Voltage
: vCE(sat)=l-5V (Max.) (I C=1A)
• Complementary to 2SB678
Unit in mm
.09.39MAX.
j2fe.45MAX.
j2fo.45
a
05.08
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
SYMBOL VCBO v CEO Vebo
ic
RATING UNIT
100
V
100
V
10
V
1.5
A
Collector Power Dissipation
Ta=25°C Tc=25°C ?C
0.8
W
8
W
Junction Temperature Storage Temperature Range
T.
2SD688 Datasheet
