2SD683
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
- High DC Current Gain-
: h FE= 500(Min.)@ IC= 5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High voltage and high power switching applications.
- Motor driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃
2SD683 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS...
