Inchange Semiconductor 2SD683
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD683 |
|---|---|
| Datasheet | 2SD683 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)●High DC Current Gain- : hFE= 500(Min.)@ IC= 5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High voltage and high power switching applications.●Motor driver applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD683 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 10mA;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 10...