Datasheet4U Logo Datasheet4U.com

2SD686 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Complement to Type 2SB676 Minimum Lot-to-Lot variations for robust device performance and relia

📥 Download Datasheet

Datasheet preview – 2SD686

Datasheet Details

Part number 2SD686
Manufacturer INCHANGE
File Size 206.78 KB
Description NPN Transistor
Datasheet download datasheet 2SD686 Datasheet
Additional preview pages of the 2SD686 datasheet.

📁 Similar Datasheet

  • 2SD686 - NPN Transistor (Toshiba)
  • 2SD686 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD683 - Silicon NPN Transistor (Toshiba)
  • 2SD683A - Silicon NPN Transistor (Toshiba)
  • 2SD684 - NPN Transistor (Toshiba)
  • 2SD684A - NPN Transistor (Toshiba)
  • 2SD685 - NPN Transistor (Toshiba)
  • 2SD687 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD687 - Silicon NPN Transistor (Toshiba)
  • 2SD688 - Silicon NPN Transistor (Toshiba)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type 2SB676 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.
Published: |