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2SD684 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) High DC Current Gain- : hFE= 1500(Min.)@IC= 2A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number 2SD684
Manufacturer INCHANGE
File Size 203.73 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain- : hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications. ·High voltage switching applications.
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