The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency medium power amplifier and medium speed
switching applications. ·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
1.