2SD689
DESCRIPTION
- High DC Current Gain-
: h FE = 1000(Min)@ IC= 1A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
- plement to Type 2SB679
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Low frequency medium power amplifier and medium speed switching applications.
- Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD689 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
