Inchange Semiconductor 2SD689
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD689 |
|---|---|
| Datasheet | 2SD689 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 1000(Min)@ IC= 1A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A
●Complement to Type 2SB679
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low frequency medium power amplifier and medium speed switching applications.●Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD689 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...