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2SD689 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Complement to Type 2SB679 Minimum Lot-to-Lot variations for robust device performance and re

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications. ·Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 1.