2SD687
DESCRIPTION
- High DC Current Gain-
: h FE = 2000(Min)@ IC= 1A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 2A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications.
- Hammer drive, pulse motor drive applications.
- Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD687 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power...
