NPN Transistor
| Part number | 2SD687 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SD687-INCHANGE.pdf |
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hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD687 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD687 | Silicon NPN Transistor | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD683 | NPN Transistor |
| 2SD684 | NPN Transistor |
| 2SD686 | NPN Transistor |
| 2SD689 | Silicon NPN Darlington Power Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
