2SD686 Overview
) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
2SD686 Key Features
- High DC Current Gain : hpE=2000 (Min. (Vce=2V,Ic=1A)
- plementary to 2SB676

