SavantIC 2SD686
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220C package●Complement to type 2SB676
●DARLINGTON
●High DC current gain
APPLICATIONS
●Switching applications●Hammer drive,pulse motor drive
●Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 4 30 150 -50~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=3A; IB=6mA IC=3A; IB=6mA VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 80 TYP.