2SD717
2SD717 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V (Max)@IC= 6.0A
- High Collector Power Dissipation
: PC= 80W @TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power switching applications
- DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃...
