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2SD717 - NPN Transistor

Key Features

  • Low Collector Saturation Voltage : VCE (sat)=0.4V (Max. ), (I C=6A).
  • High Collector Power Dissipation : P C=80W (Tc=25°C) 5.45±Q2 545±0.2.

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Datasheet Details

Part number 2SD717
Manufacturer Toshiba
File Size 127.35 KB
Description NPN Transistor
Datasheet download datasheet 2SD717 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm 1&9MAX. 0&2±o.2 DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. -A.'^ -A. eH _u FEATURES • Low Collector Saturation Voltage : VCE (sat)=0.4V (Max.), (I C=6A) • High Collector Power Dissipation : P C=80W (Tc=25°C) 5.45±Q2 545±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector pation Power Dissi-/(T.T, c-ozqd°rC-) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB PC T.i T st S RATING 70 50 5 10 2 80 150 -55^150 UNIT V V V A A W °C °C x' + 1 03 00 if— aal.fuLu it ti 1. BASE 2. COLLECTOR (HEAT SINK) 3.