Inchange Semiconductor 2SD711
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD711 |
|---|---|
| Datasheet | 2SD711 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain●Low Collector Saturation Voltage
●Excellent Safe Operating Area
●High Reliability
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Motor controls●Inverters，choppers
●Switching regulators
●General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 500 V 450 V 6 V 15 A 1 A 100 W 150 ℃ -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.