Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V (Max)@IC= 6.0A
- High Collector Power Dissipation
: PC= 80W @TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power switching applications
- DC-DC converter and DC-AC inverter...
