2SD717 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A High Collector Power Dissipation : PC= 80W @TC=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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2SD717 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD717
Manufacturer	Inchange Semiconductor
File Size	214.83 KB
Description	NPN Transistor
Datasheet	2SD717 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation : PC= 80W @TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.