2SD717 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation.
| Part number | 2SD717 |
|---|---|
| Download | 2SD717 Datasheet (PDF) |
| File Size | 214.83 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD717 | NPN Transistor |
SavantIC |
2SD717 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation.