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2SD716 - NPN Transistor

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Part number 2SD716
Manufacturer INCHANGE
File Size 215.38 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 30~35W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO

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