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2SD716 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier appl

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A ·Complement to Type 2SB686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 30~35W high-fidelity audio frequency amplifier output stage.