Inchange Semiconductor 2SD715
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD715 |
|---|---|
| Datasheet | 2SD715 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain : hFE= 2000(Min)@ IC= 1A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min)
●High Reliability
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency power amplifier and low speed high current switching industrial useABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous 110 V 110 V 5 V 7 A ICM Collector Current-Peak PC ollector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 VCE(sat) Collector-Emi...