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2SD748 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Low frequency power amplifier.

Regulator for TV power supply.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier. ·Regulator for TV power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD748 isc website：www.iscsemi.