Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
High Power Dissipation-
: PC= 150W(Max)@TC=25℃
High Current Capability
Complement to Type 2SB723
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for powe
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD753
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·High Power Dissipation-
: PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SB723 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Baser Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SD753 Datasheet
