| Part number | 2SD750 |
|---|---|
| Datasheet | 2SD750-INCHANGE.pdf |
| File Size | 207.86 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
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