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2SD750 - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Wide Area of Safe Operation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF high power amplifier applications.

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Datasheet Details

Part number 2SD750
Manufacturer INCHANGE
File Size 207.86 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD750 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD750 isc website：www.iscsemi.
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