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2SD753 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ High Current Capability Complement to Type 2SB723 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for powe

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Datasheet Details

Part number 2SD753
Manufacturer INCHANGE
File Size 194.99 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD753 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement to Type 2SB723 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Baser Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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