2SD768 - NPN Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Complement to Type 2SB727 Minimum Lot-to-Lot variations for robust device performance and reli

📥 Download Datasheet

2SD768 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD768
Manufacturer	Inchange Semiconductor
File Size	202.04 KB
Description	NPN Transistor
Datasheet	2SD768 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD768	Silicon NPN Transistor	Hitachi Semiconductor
2SD768	SILICON POWER TRANSISTOR	SavantIC
2SD768K	Silicon NPN Transistor	Hitachi Semiconductor
2SD761	Transistor	ETC
2SD762	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SD762	NPN Transistor
2SD764	NPN Transistor
2SD705	NPN Transistor
2SD706	NPN Transistor
2SD711	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type 2SB727 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.