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2SD762 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max.) @IC= 2.0A Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF pow

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Datasheet Details

Part number 2SD762
Manufacturer INCHANGE
File Size 208.07 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD762 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max.) @IC= 2.0A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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