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2SD794 - NPN Transistor

General Description

High Collector Current -IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) Complement to Type 2SB744 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in audio frequency amplifier.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type 2SB744 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD794 isc website：www.iscsemi.