Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
High Power Dissipation
High Current Capability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
2SD797
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power amplifier applications. ·High Power switching applications. ·DC-DC converter applications. ·Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
8
A
200
W
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.
2SD797 Datasheet
