2SD800 - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 750V (Min) High Switching Speed Low collector saturation voltage

and reliable operation.

Designed for use in converters, inverters, switching regulators, motor control s

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2SD800 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD800
Manufacturer	Inchange Semiconductor
File Size	177.18 KB
Description	NPN Transistor
Datasheet	2SD800 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD800 DESCRIPTION ·High Breakdown Voltage- : VCBO= 750V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6 A 30 W 150 ℃ -55-150 ℃ isc website：www.iscsemi.