Datasheet Details
| Part number | 2SD803 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD803-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD803 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD803-INCHANGE.pdf |
|
|
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 8 A IB Base Current -Continuous 1 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD803 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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