Built-in Base-Emitter Shunt Resistors
High DC current gain-
hFE = 2000 (Min) @ IC =1 Adc
Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
8
A
IB
Base Current -Continuous
1
A
PC
Collector Power Dissipation@TC=25℃ 100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SD803
isc website：www.iscsemi.
2SD803 Datasheet
