Datasheet Details
| Part number | 2SD800 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SD800-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD800.
| Part number | 2SD800 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SD800-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 750V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6 A 30 W 150 ℃ -55-150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD800 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA;
IC= 0 MIN TYP MAX UNIT 6 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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