2SD811 Overview
·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD811 TC=25℃ unless otherwise specified SYMBO L PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA;.
