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2SD823 - Silicon NPN Power Transistor

Description

Collector Current: IC= 6A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for B/W TV horizontal output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD823 isc website：www.iscsemi.
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