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2SD826 - NPN Transistor

General Description

Large Current Capability-IC= 5A High DC Current Gain- : hFE= 120-560 @ IC= 0.5A Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 3A, IB= 60mA Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited

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isc Silicon NPN Power Transistor DESCRIPTION ·Large Current Capability-IC= 5A ·High DC Current Gain- : hFE= 120-560 @ IC= 0.5A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 3A, IB= 60mA ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse t= 100ms 8 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 1.