Datasheet4U Logo Datasheet4U.com

2SD835 - NPN Transistor

General Description

High DC Current Gain- : hFE= 400(Min) @IC= 4A Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignitor Relay& solenoid drivers Motor controls

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD832 Silicon Darlington NPN Transistor Fujitsu
2SD833 Transistor Fuji Electric
2SD834 SILICON POWER TRANSISTOR SavantIC
2SD834 (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor TGS
2SD837A NPN Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD833 Silicon NPN Darlington Power Transistor
2SD834 NPN Transistor
2SD836 NPN Transistor
2SD837 Silicon NPN Darlington Power Transistor
2SD800 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 350 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.